[PATCH] ARM: EXYNOS4: Enable double linefill in PL310 Prefetch Control Register
kmpark at infradead.org
Wed Sep 14 06:08:18 UTC 2011
Interesting feature, and it's not samsung soc issue, so add the arm
It checked and the see the read performance improvement from 868MiB/s
to 981MiB/s with lmbench.
It's helpful to test other SoC., e.g., OMAP4, STE and so on.
BTW, why do you set the 27-bit? In my PL310 Spec., it's reserved bit
and should be zero (SBZ).
On Tue, Sep 13, 2011 at 3:07 PM, Siarhei Siamashka
<siarhei.siamashka at gmail.com> wrote:
> Setting "Double linefill enable" bit improves memcpy performance
> from ~750 MB/s to ~1150 MB/s when working with large buffers and
> also the performance of just anything which may need good memory
> bandwidth (for example, software rendered graphics).
> Additionally setting "Double linefill on WRAP read disable" bit
> compensates most of the random access latency increase.
> Signed-off-by: Siarhei Siamashka <siarhei.siamashka at gmail.com>
> arch/arm/mach-exynos4/cpu.c | 2 +-
> 1 files changed, 1 insertions(+), 1 deletions(-)
> diff --git a/arch/arm/mach-exynos4/cpu.c b/arch/arm/mach-exynos4/cpu.c
> index ba503c3..1afd25f 100644
> --- a/arch/arm/mach-exynos4/cpu.c
> +++ b/arch/arm/mach-exynos4/cpu.c
> @@ -238,7 +238,7 @@ static int __init exynos4_l2x0_cache_init(void)
> __raw_writel(0x110, S5P_VA_L2CC + L2X0_DATA_LATENCY_CTRL);
> /* L2X0 Prefetch Control */
> - __raw_writel(0x30000007, S5P_VA_L2CC + L2X0_PREFETCH_CTRL);
> + __raw_writel(0x78000007, S5P_VA_L2CC + L2X0_PREFETCH_CTRL);
> /* L2X0 Power Control */
> __raw_writel(L2X0_DYNAMIC_CLK_GATING_EN | L2X0_STNDBY_MODE_EN,
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